Simulação do impacto das atividades florestais na fragilidade potencial em plantios de pinus.

Este trabalho, realizado em uma área com povoamento de Pinus taeda, teve por objetivo simular e mapear a influência do valor de impacto das atividades florestais na fragilidade potencial. Variáveis do solo, de declividade do terreno, valor de impacto e de cobertura vegetal foram utilizadas para gerar os mapas. Os resultados expressos pelo modelo adotado mostraram que as áreas mais frágeis apresentam em sua maioria declividades superiores a 75 % e textura que variam de arenosa a média, e as áreas menos frágeis apresentam predominantemente relevo plano (até 3 %) e textura argilosa. Quando simulado o impacto das atividades florestais sobre esse ambiente, verificou-se que na maior parte da área (78 %) todas as atividades florestais podem ser realizadas sem influência na degradação do meio ambiente e para algumas áreas (11 %) o ambiente foi considerado menos frágil, em razão da presença de cobertura vegetal

Response of reverse convection to fast IMF transitions

The nature of the transition that high‐latitude reverse convection makes in response to fast interplanetary magnetic field (IMF) changes is investigated using observations from multiple spacecraft and a ground magnetometer array. We focused on two fast IMF‐transition events on 22 April 2006. Immediately after the first event, three ST5 spacecraft identified a clear change in the distribution of the polar cap field‐aligned current. Coordinate observations with the Greenland magnetometer chain showed that the near‐noon Hall current distribution, which is closely related to the polar cap field‐aligned current or reverse convection, was in a transition state for about 10 min. For the second event, the Greenland magnetic perturbations also showed that a transition state occurred in the near‐noon sector for 10–15 min. Three DMSP spacecraft that traversed the polar cap provided evidence showing that variations of the ground magnetic perturbations were produced by the transition from clockwise plasma circulation to the anticlockwise circulation over the polar cap. A simple calculation based on the Biot‐Savart law shows that the near‐noon transition state is consistent with the approach of a new convection region to the near‐noon sector at the speed of 0.5–1 km s–1, which is coupled with the moving away of the old convection region at a similar speed. For the higher‐latitude sunward flow region, it is found that the convection takes a transition state almost simultaneously (within 1 min) with that in the near‐noon sector, i.e., quasi‐instantaneous response.Key PointsTransition state with a timescale of ~10 min in the near‐noon polar cap for BZ > 0The state is consistent with the passage of old and new convection regionsAlmost simultaneous initial response in the upstream polar cap and the near noonPeer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/111947/1/jgra51794.pd

Optimization And Learning For Rough Terrain Legged Locomotion

We present a novel approach to legged locomotion over rough terrain that is thoroughly rooted in optimization. This approach relies on a hierarchy of fast, anytime algorithms to plan a set of footholds, along with the dynamic body motions required to execute them. Components within the planning framework coordinate to exchange plans, cost-to-go estimates, and \u27certificates\u27 that ensure the output of an abstract high-level planner can be realized by lower layers of the hierarchy. The burden of careful engineering of cost functions to achieve desired performance is substantially mitigated by a simple inverse optimal control technique. Robustness is achieved by real-time re-planning of the full trajectory, augmented by reflexes and feedback control. We demonstrate the successful application of our approach in guiding the LittleDog quadruped robot over a variety of types of rough terrain. Other novel aspects of our past research efforts include a variety of pioneering inverse optimal control techniques as well as a system for planning using arbitrary pre-recorded robot behavior

Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques

The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates – (100) with 6⁰ offset towards – under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM)

Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques

The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates – (100) with 6⁰ offset towards – under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM)

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm(-2) and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations